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February 1997
NDM3001 3 Phase Brushless Motor Driver
General Description
The NDM3001 three phase brushless motor driver consists of three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process is tailored to minimize on-state resistance which reduces power loss, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage 3 phase motor driver such as disk drive spindle motor control and other half bridge applications.
Features
2.9 A, 30 V, 2.5W High density cell design for extremely low RDS(ON). High power and current handling capability. Industry standard SOIC-16 surface mount package.
________________________________________________________________________________
11,14 10 12 15
Q1
1,16 4,13 8,9
Q3
Q5
Q2
2 5 7 3,6
Q4
Q6
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter
T A = 25C unless otherwise noted
NDM3001 30 20 2.9 10 2.5 1.6
(Note 1c)
Units V V A
Drain-Source Voltage (All Types) Gate-Source Voltage (All Types) Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 Continuous Q3+Q6 or Q5+Q2 or Q5+Q4 - Pulsed
(Note 1a & 2) (Note 1a) (Note 1b)
PD
Total Power Dissipation Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4
W
1.4 -55 to 150 C
TJ,TSTG
Operating and Storage Temperature Range
(c) 1997 Fairchild Semiconductor Corporation
NDM3001 Rev.C
THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1a) Thermal Resistance, Junction-to-Case Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1) 50 C/W
RJC
20
C/W
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V TJ=55 C Gate - Body Leakage, Forward
(Note 3)
o
All All
30 1 10
V A A nA
VGS = 20 V, VDS = 0 V VDS = VGS, ID = -250 A TJ=125 C VDS = VGS, ID = 250 A TJ=125 C
o o
All
100
ON CHARACTERISTICS
Gate Threshold Voltage
Q1, Q3, Q5
-1 - 0.75
-1.6 -1.3 1.5 1.2 0.19 0.27 0.3
-2 -1.5 2 1.5 0.24 0.45 0.36 0.115 0.221 0.16
V
Q2, Q4, Q6
1 0.75
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -2.9 A TJ=125 C VGS = -4.5 V, ID = -2.2 A VGS = 10 V, ID = 2.9 A TJ=125oC VGS = 4.5 V, ID = 2.2 A
o
Q1, Q3, Q5
Q2, Q4, Q6
0.09 0.126 0.13
ID(on)
On-State Drain Current
VGS = 10 V, VDS = -5 V VGS = 10 V, VDS = 5 V
Q1, Q3, Q5 Q2, Q4, Q6
-10 10
A
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Q1, Q3, Q5 VDS = -15 V, VGS = 0 V, f = 1.0 MHz Q2, Q4, Q6 15 V, VGS = 0 V, f = 1.0 MHz VDS = Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 260 185 140 115 50 40 pF pF pF
Output Capacitance
Reverse Transfer Capacitance
NDM3001 Rev.C
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter
(Note 3)
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS tD(on) tr tD(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time
Q1, Q3, Q5 VDD = -15 V, ID = -1 A, VGEN = -10 V, RGEN = 6 Q2, Q4, Q6 VDD = 15 V, ID = 1 A, VGEN = 10 V, RGEN = 6
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6
10 9 13 21 21 21 5 8 10 9.5 1.6 1.5 3 2.5
40 40 40 40 90 90 50 50 25 25
ns ns
Turn - Off Delay Time
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6
ns
Turn - Off Fall Time
ns
Total Gate Charge Gate-Source Charge
Q1, Q3, Q5 VDS = -10 V, ID = -3.0 A, VGS = -10 V Q2, Q4, Q6 VDS = 10 V, ID = 3.0 A, VGS = 10 V
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6
nC nC
Gate-Drain Charge
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD trr
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 All -0.8 0.8
-1.2 1.2 -1.3 1.3 100
A V
VGS = 0 V, IS = -3.0 A VGS = 0 V, IS = 3.0 A VGS = 0 V, I F = 3.0 A, dI F /dt = 100 A/s
(Note 3) (Note 3)
ns
PD (t) =
R J A (t)
T J-TA
=
R J C CA +R (t)
T J-TA
= I 2 (t) x RDS(ON ) D
TJ
Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 50oC/W when mounted on a 1 in2 pad of 2oz cpper. b. 80oC/W when mounted on a 0.027 in2 pad of 2oz cpper. c. 90 C/W when mounted on a 0.0028 in pad of 2oz cpper.
o 2
1a
1b
1c
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDM3001 Rev. C
Typical Electrical Characteristics
10
V GS =10V
I D , DRAIN-SOURCE CURRENT (A) 8
, DRAIN-SOURCE CURRENT (A)
7.0 6.0 5.0 4.5 4.0
-10
V GS = -10V
-7.0 -6.0 -5.5
-8 -5.0 -6 -4.5 -4.0 -3.5 -2 -3.0 0 0 -1
V
DS
6
3.5
4
-4
2
3.0
0 0 0.5 1 1.5 2 VDS , DRAIN-SOURCE VOLTAGE (V) 2.5 3
I
D
-2
-3
-4
-5
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. N-Channel On-Region Characteristic.
Figure 2. P-Channel On-Region Characteristics.
2 .6 2 .4 DRAIN-SOURCE ON-RESISTANCE 2 .2 2 1 .8 1 .6 1 .4 1 .2 1 0 .8 0 2 4 6 I D , DRAIN CURRENT (A) 8 10
2.6
VGS = 3.5V
R DS(on) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE
2.4
V GS = -4.0V
2.2 2 1.8 1.6 1.4 1.2
R DS(on), NORMALIZED
4.0 4.5 5.0 6.0 7 10
-4.5 -5.0 -5.5 -6.0 -7.0 -10
1 0.8 0 -2 -4 -6 I D , DRAIN CURRENT (A) -8 -10
Figure 3. N-Channel On-Resistance Variation with Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation with Gate Voltage and Drain Current.
1.6
1 .6
ID = 2.9A VGS = 10V
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.4 R DS(ON), NORMALIZED 1 .4 R DS(ON), NORMALIZED
I D = -2.9A V GS = -10V
1.2
1 .2
1
1
0.8
0 .8
0.6 -50
-25
0
J
25
50
75
100
125
150
0 .6 -50
-25
T , JUNCTION TEMPERATURE (C)
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
Figure 5. N-Channel On-Resistance Variation with Temperature.
Figure 6. P-Channel On-Resistance Variation with Temperature.
NDM3001 Rev.C
Typical Electrical Characteristics
2
V G S = 10 V
R DS(on) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 1 .8 DRAIN-SOURCE ON-RESISTANCE 1 .6 1 .4 1 .2
1.8
V GS = -10V
1.6
TJ = 125C
R DS(on) , NORMALIZED
TJ = 125C
1.4 1.2
25C
25C
1 0 .8 0 .6 0 .4 0 1 I D 2 3 , DRAIN CURRENT (A) 4 5
1 0.8 0.6
-55C
-55C
0
-1
I D
-2
-3
-4
-5
, DRAIN CURRENT (A)
Figure 7. N-Channel On-Resistance Variation with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation with Drain Current and Temperature.
5
V DS =10V
4 I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A)
-5
V DS = -10V
-4
T
J
= -55C
25C 125C
3
-3
2
-2
T = -55C J
1
25C 125C
-1
0 1 1.5 V
GS
0 2 2.5 3 , GATE TO SOURCE VOLTAGE (V) 3.5 4 -1 -2 V
GS
-3 -4 , GATE TO SOURCE VOLTAGE (V)
-5
Figure 9. N-Channel Transfer Characteristics.
Figure 10. P-Channel Transfer Characteristics.
1.2 GATE-SOURCE THRESHOLD VOLTAGE GATE-SOURCE THRESHOLD VOLTAGE
1.2
1.1
V DS = V GS I D = 250A
V GS(th) , NORMALIZED
VDS = V
1.1
GS
I D =- 250A
V th, NORMALIZED
1
1
0.9
0.9
0.8
0.7
0.8
0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
0.7 -50
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
Figure 11. N-Channel Gate Threshold Variation with Temperature.
Figure 12. P-Channel Gate Threshold Variation with Temperature.
NDM3001 Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE 1.12
DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08
I D = 250A
1.06 1.04 1.02 1 0.98 0.96 0.94 -50
I D = -250A
BV DSS , NORMALIZED
1.08
, NORMALIZED
1.04
1
0.96
0.92 -50
-25
0
25
50
75
100
125
150
BV
DSS
-25
TJ , JUNCTION TEMPERATURE (C)
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
Figure 13. N-Channel Breakdown Voltage Variation with Temperature.
Figure 14. P-Channel Breakdown Voltage Variation with Temperature.
500
600 400 300
300 200 CAPACITANCE (pF)
CAPACITANCE (pF)
C iss C oss
Ciss
200
100
Coss
100
60 40
f = 1 MHz V GS = 0V
C rss
f = 1 MHz
50
Crss
V GS = 0 V
20 0.1
0.2 V
DS
0.5 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V)
20
30
30 0.1
0.2 -V
DS
0.5 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V)
20
30
Figure 15. N-Channel Capacitance Characteristics.
Figure 16. P-Channel Capacitance Characteristics.
10
10
I D = 2.9A
, GATE-SOURCE VOLTAGE (V) 8
V DS = 5V 10V 15V
-VGS , GATE-SOURCE VOLTAGE (V) 8
V DS = -5V I D = -2.9A -15V
6
-10V
6
4
4
2
2
V
GS
0 0 2 Qg 4 , GATE CHARGE (nC) 6 8
0 0 1 2 3 4 5 6 7 Q g , GATE CHARGE (nC)
Figure 17. N-Channel Gate Charge Characteristics.
Figure 18. P-Channel Gate Charge Characteristics.
NDM3001 Rev.C
Typical Electrical Characteristics
5 1
5
I S , REVERSE DRAIN CURRENT (A)
V GS = 0V
-I , REVERSE DRAIN CURRENT (A)
TJ = 125C
0.1
2 1 0 .5 0 .1
VGS = 0V T J = 125C
25C -55C
25C
0 .0 1
0.01
-55C
0.001
0 .0 0 1
0.0001 0 0.2 0.4 0.6 0.8 1 1.2
S
0 .0 0 0 1 0 0 .2 -V
SD
V SD , BODY DIODE FORWARD VOLTAGE (V)
0 .4 0.6 0 .8 1 , BODY DIODE FORWARD VOLTAGE (V)
1 .2
Figure19. N-Channel Body Diode Forward Voltage Variation with Source Current and Temperature.
Figure 20. P-Channel Body Diode Forward Voltage Variation with Source Current and Temperature.
V DS = 10V
, TRANSCONDUCTANCE (SIEMENS) 6
gFS , TRANSCONDUCTANCE (SIEMENS)
7
5 V DS =-10V 4 T J = -55C 25C 3 125C 2
T J = -55C 25C
5
125C
4 3 2 1 0 0 2 4 6 I D , DRAIN CURRENT (A) 8 10
1
g
FS
0
0
-1
D
-2
-3
-4
-5
I , DRAIN CURRENT (A)
Figure 21. N-Channel Transconductance Variation with Drain Current and Temperature.
Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
VO U T
VGS
10%
10% 90%
R GEN
G
V IN
S
10%
50%
50%
PULSE WIDTH
Figure 23. N or P-Channel Switching Test Circuit.
Figure 24. N or P-Channel Switching Waveforms.
NDM3001 Rev.C
Typical Thermal and Electrical Characteristics
3.5
3.5
3
DC POWER DISSIPATION (W)
I D , DC DRAIN CURRENT (A)
3
1a
2.5
1a
2
2.5
1b 1c
1.5
1b 1c 4.5"x5" FR-4 PCB Ta = 25C Still Air
2
4.5"x5" FR-4 PCB Ta = 25C Still Air Vgs = -10V
1
0.5 0 0.2 0.4 0.6 0.8 1
1.5 0
2oz COPPER MOUNTING PAD AREA (in 2 )
0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 )
1
Figure 25. SOIC-16 3 Leadframe Device DC Power Dissipation versus Copper Mounting Pad Area.
Figure 26. P-Ch DC Drain Current Capability versus Copper Mounting Pad Area.
4.5
20 10
1a
I D , DC DRAIN CURRENT (A)
I , DRAIN CURRENT (A)
4
3 1
R
(O DS
N)
LIM
IT
1m
s
10
ms
10
0m
3.5
1b 1c
0.3 0.1
VGS = 10V SINGLE PULSE R J A = See Note 1c T
0.8 1
A
1s 10 s DC
s
3
4.5"x5" FR-4 PCB Ta = 25C Still Air Vgs =10V
D
0.03 0.01 0.5
= 25C
30 50
2.5 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1
2 5 10 VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 27. N-Ch DC Drain Current Capability versus Copper Mounting Pad Area.
Figure 28. P-Ch Typical Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 1
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
r(t), NORMALIZED EFFECTIVE
R JA (t) = r(t) * R JA R JA = See Note 1c
t1 TJ - T
t2
= P * R JA (t) Duty Cycle, D = t 1 / t 2
A
10
100
300
t1 , TIME (sec)
Figure 29. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.
NDM3001 Rev.C
SOIC-16 Tape and Reel Data and Package Dimensions
SOIC(16lds) Packaging Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-16 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label
FD85AB
Customized Label
SOIC (16lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1437 0.7735 L86Z Rail/Tube 45 530x130x83 13,500 0.1437 -
NDM3001 NDM3001
343mm x 342mm x 64mm Standard Intermediate box ESD Label F63TNR Label sample
LOT: CBVK741B019 FSID: NDM3000 QTY: 2500 SPEC:
FD85AB
NDM3001
FD85AB
FD85AB
SOIC-16 Unit Orientation
NDM3001
NDM3001
FD85AB
Pin 1
F63TNR Label F63TNR Label
ESD Label
D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3
SOIC(16lds) Tape Leader and Trailer Configuration: Figure 2.0
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets
October 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC(16lds) Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOIC(16lds) (16mm)
A0
6.60 +/-0.30
B0
10.35 +/-0.25
W
16.0 +/-0.3
D0
1.55 +/-0.05
D1
1.60 +/-0.10
E1
1.75 +/-0.10
E2
14.25 min
F
7.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
2.40 +/-0.40
T
0.450 +/-0.150
Wc
13.0 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum Typical component cavity center line
0.9mm maximum
B0 10 deg maximum component rotation
0.9mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOIC(16lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
B Min Dim C
Dim A max
Dim D min Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
16mm
Reel Option
13" Dia
Dim A
13.00 330
Dim B
0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2
Dim N
4.00 100
Dim W1
0.646 +0.078/-0.000 16.4 +2/0
Dim W2
0.882 22.4
Dim W3 (LSL-USL)
0.626 - 0.764 15.9 - 19.4
July 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC-16 (FS PKG Code S3)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.1437
October 1999, Rev. A1
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First Production
No Identification Needed
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